<6>s3c6400-uart.0: s3c2410_serial0 at MMIO 0x7f005000 (irq = 16) is a S3C6400/10
<6>s3c6400-uart.1: s3c2410_serial1 at MMIO 0x7f005400 (irq = 20) is a S3C6400/10
<6>s3c6400-uart.2: s3c2410_serial2 at MMIO 0x7f005800 (irq = 24) is a S3C6400/10
<6>s3c6400-uart.3: s3c2410_serial3 at MMIO 0x7f005c00 (irq = 28) is a S3C6400/10
<6>loop: module loaded
<6>pmem: 1 init
<4>S3C NAND Driver, (c) 2008 Samsung Electronics
<4>S3C NAND Driver is using hardware ECC.
<6>NAND device: Manufacturer ID: 0xec, Chip ID: 0xda (Samsung NAND 256MiB 3,3V 8-bit)
<5>Creating 3 MTD partitions on "NAND 256MiB 3,3V 8-bit":
<5>0x000000000000-0x000000080000 : "Bootloader"
<5>0x000000080000-0x000000580000 : "Kernel"
<5>0x000000580000-0x000010000000 : "File System"
<5>UBI: attaching mtd2 to ubi0
<5>UBI: physical eraseblock size: 131072 bytes (128 KiB)
<5>UBI: logical eraseblock size: 129024 bytes
<5>UBI: smallest flash I/O unit: 2048
<5>UBI: sub-page size: 512
<5>UBI: VID header offset: 512 (aligned 512)
<5>UBI: data offset: 2048
<5>UBI: max. sequence number: 199
<5>UBI: attached mtd2 to ubi0
<5>UBI: MTD device name: "File System"
<5>UBI: MTD device size: 250 MiB
<5>UBI: number of good PEBs: 2002
<5>UBI: number of bad PEBs: 2
<5>UBI: max. allowed volumes: 128
<5>UBI: wear-leveling threshold: 4096
<5>UBI: number of internal volumes: 1
<5>UBI: number of user volumes: 1
<5>UBI: available PEBs: 0
<5>UBI: total number of reserved PEBs: 2002
<5>UBI: number of PEBs reserved for bad PEB handling: 20
<5>UBI: max/mean erase counter: 2/0
<5>UBI: image sequence number: 1329773958
<5>UBI: background thread "ubi_bgt0d" started, PID 540
<6>PPP generic driver version 2.4.2
<6>PPP Deflate Compression module registered
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